Acácio Manuel Raposo Amaral 编辑 at IgMin Research
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简历
Acácio M. R. Amaral received the E. E. diploma, the M. S. degree and the Ph. D degree from Coimbra’s University, Portugal in 1998, 2005 and 2010, respectively.
Since 1998 has been with Coimbra’s Polytechnic, where is currently an Associate Professor in the Department of Informatics and Systems.
He is the author of five books entitled Circuit and Electronic Devices Analysis (Porto, Portugal, Publindustria, 2013 - in Portuguese), Digital Systems (Lisboa, Portugal, Edições Sílabo, 2014 - in Portuguese), Analog Electronics (Lisboa, Portugal, Edições Sílabo, 2017 - in Portuguese), Digital Electronics (Lisboa, Portugal, Edições Sílabo, 2019 - in Portuguese) and Applied Electronics (Lisboa, Portugal, Edições Sílabo, 2021 - in Portuguese).
He is the author of more than 50 papers published in technical journals and conference proceedings and co-author of a book entitled Diagnosis and Fault Tolerance of Electrical Machines, Power Electronics and Drives, (Stevenage, United Kingdom, Institution of Engineering and Technology, 2018 - in English).
His research activities include fault diagnosis, design and simulation of Power Converters, with emphasis on the consequences of aging of storage devices such as capacitors, super capacitors and batteries, as well as, the development of solutions to this problem.
研究兴趣
Fault diagnosis, DC-DC Converters, Capacitors, Super capacitors, Batteries, Circuit Simulation and Machine Learning
Editor
工作详情
Professor
Polytechnic Institute of Coimbra
Department of Informatics and Systems
Portugal
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研究文章
- Contamination in Heat Exchangers: Types, Energy Effects and Prevention Methods
- Analytical Expressions of the Markov Chain of K-Ras4B Protein within the Catalytic Environment and a New Markov-State Model
- Enhancing Missing Values Imputation through Transformer-Based Predictive Modeling
- Biomimetic Synthesis of Calcium Carbonate in Bile in the presence of Amino Acids
- AFM Analysis of Polymeric Membranes Fouling
- On how Doping with Atoms of Gadolinium and Scandium affects the Surface Structure of Silicon
